View BLV857_1159978.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV857 UHF linear push-pull power transistor
Product specification Supersedes data of 1995 Oct 04 1997 Jan 16
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES * Internal input matching for an optimum wideband capability and high gain * Polysilicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATION * Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.
5 3 Top view 4 b2
BLV857
PINNING SOT324B PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e DESCRIPTION collector 1 collector 2 base 1 base 2 common emitters
handbook, halfpage
c1 2 b1 e
1
c2
MAM217
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-A Note 1. Three-tone test signal (-8, -16 and -10 dB); dim = -54 dB. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. f (MHz) 860 VCE (V) 25 ICQ (A) 2 x 1.1 Po sync (W) 10(1) Gp (dB) 10(1)
1997 Jan 16
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 70 C; note 1; see Fig.2 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN.
BLV857
MAX. 60 28 2.5 7.4 7.4 80 +150 200 V V V A A
UNIT
W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER CONDITIONS VALUE 1.6 0.4 UNIT K/W K/W thermal resistance from junction to mounting-base Ptot = 80 W; Tmb = 70 C note 1 thermal resistance from mounting-base to heatsink note 1
Note to Limiting values and Thermal characteristics 1. Total device; both sections equally loaded.
handbook, halfpage
200
MBH754
Ptot (W)
160
120
(1)
80
(2)
40
0 0 40 80 120 160 Tmb (C)
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 Power derating curve.
1997 Jan 16
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
CHARACTERISTICS Values apply to either transistor section; Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current collector-emitter leakage current DC current gain collector capacitance feedback capacitance CONDITIONS IC = 15 mA; IE = 0 IC = 30 mA; IB = 0 IE = 0.6 mA; IC = 0 VCB = 27 V; VBE = 0 VCE = 20 V VCE = 25 V; IC = 1.1 A; see Fig.3 VCB = 25 V; IE = ie = 0; f = 1 MHz; see Fig.4 VCE = 25 V; IC = 0; f = 1 MHz MIN. 60 28 2.5 - - 30 - - TYP. - - - - - - 18 11
BLV857
MAX. - - - 1.5 3 140 - -
UNIT V V V mA mA pF pF
handbook, halfpage
160
MBH756
handbook, halfpage
40
MBH755
hFE 120
Cc (pF) 30
80
20
40
10
0 0 1 2 Ic (A) 3
0 0 10 20 30 VCB (V) 40
VCE = 25 V; tp = 500 s; = <1 %.
IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage; typical values.
1997 Jan 16
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter push-pull class-A test circuit. MODE OF OPERATION CW class-A CW class-A Notes f (MHz) 860 860 VCE (V) 25 25 ICQ (A) 2 x 1.1 2 x 1.1 Po sync (W) 10(1) 10(2) Gp (dB) 10(1) 10(2)
BLV857
dim (dB) -54(1) -51(2)
1. Three-tone test method: fvision = 855.25 MHz (vision carrier -8 dB); fsound = 860.75 MHz (sound carrier -10 dB); fsideband = 859.68 MHz (sideband signal -16 dB); 0 dB corresponds to peak sync level. 2. Three-tone test method: fvision = 855.25 MHz (vision carrier -8 dB); fsound = 860.75 MHz (sound carrier -7 dB); fsideband = 859.68 MHz (sideband signal -16 dB); 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLV857 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the conditions: VCE = 25 V; ICQ = 2 x 1.1 A; f = 860 MHz; Th = 25 C; Po sync = 10 W.
handbook, halfpage
50
MBH757
Po sync (W) 40
handbook, halfpage
14
MBH758
Gp (dB)
(1)
(2)
12
(1)
30
(2)
10 20 8 10
0 0 2 4 Pi sync (W) 6
6 0 20 40 Po sync (W) 60
VCE = 25 V; ICQ = 2 x 1.1 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 C. (2) Th = 70 C.
VCE = 25 V; ICQ = 2 x 1.1 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 C. (2) Th = 70 C.
Fig.5
Output power as a function of input power; typical values.
Fig.6
Power gain as a function of output power; typical values.
1997 Jan 16
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
handbook, halfpage
-30 dim -40
MBH759
handbook, halfpage
(dB)
(1) (2)
-40 dim (dB) -45
MBH760
-50 -50 -60
(1)
-70
-55
(2)
-80
0
20
40
Po sync (W)
60
-60 1.4
1.8
2.2
2.6
IC (A) 3
VCE = 25 V; ICQ = 2 x 1.1 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 70 C. (2) Th = 25 C.
VCE = 25 V; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 70 C. (2) Th = 25 C.
Fig.7
Intermodulation distortion as a function of output power; typical values.
Fig.8
Intermodulation distortion as a function of collector current; typical values.
1997 Jan 16
6
Product specification
BLV857
Fig.9 Class-A test circuit at f = 860 MHz.
handbook, full pagewidth
1997 Jan 16
Vsupply C5 C2 R4 C6 L17 C3 T2 T2
Philips Semiconductors
,, ,,
R2 C1 T1 R1 +VCC C11 C12 C15 L15
P1
R3
+VBB
UHF linear push-pull power transistor
C4 L7 L9 L11 C30
7
DUT L13 L5 L3 C22 C24 C25 C27 C21 C23 C26 C28 L4 L12 L14 L6 L10 L8 C31
C7 C8
L1
R5
output 50 C29 B2
input 50
C20
B1
R6
C9 C10
L2
L16
C13 C14
,,,,, ,,,,,,,,, ,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,
,,,,,,,,, ,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,, ,,,,,
MBH764
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
handbook, full pagewidth
115
55
T1 ECB
R3 C1 B1
P1
T2 R4 C3 L7
C5 C6
L17 B2 C15 C11 C12 C29
VCC
C4
R1 R2 C2 C21 & C22 L5 L3
BLV857
C8 C7 50 input C9 C10
L1 & L2 R5 C20 R6
C30 L9 L11
C25 & C26 L13
50 output
L4 L6 C23 & C24 L8
L12 L10 C31
L14 C27 & C28
L15 & L16
C14 C13
MBH765
wire jumper
inner lead and outer lead are shorted (each balun).
Dimensions in mm. The components are situated on one side of the copper-clad epoxy fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
1997 Jan 16
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
List of components COMPONENT DESCRIPTION VALUE 10 nF 47 F; 25 V 100 nF 1206
BLV857
DIMENSIONS CATALOGUE No. 805 2222 590 16627 2222 030 36479 2222 591 16641 2222 030 38109
C1, C2, C3, C5, C6, multilayer ceramic chip capacitor C7, C8, C9, C10 C4 solid aluminium capacitor C11, C12, C13, C14, C30, C31 C15 C20 C21 C22, C24, C26, C28 C23 C25 C27 C29 L1, L2, L15, L16 L3, L4 L5, L6 L7, L8 L9, L10 L11, L12 L13, L14 L17 B1, B2 R1 R2 R3 R4 R5, R6 P1 T1 T2 Notes multilayer ceramic chip capacitor
solid aluminium capacitor 10 F; 63 V multilayer ceramic chip capacitor; note 1 18 pF multilayer ceramic chip capacitor; note 1 Tekelec Giga trim 37271; note 3 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; notes 1 and 3 multilayer ceramic chip capacitor; notes 1 and 3 multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; notes 2 and 4 Semi rigid coax balun UT70-25 SMD resistor SMD resistor SMD resistor SMD resistor SMD resistor potentiometer NPN transistor double PNP transistor 3 pF 0.6 to 4.5 pF 7.5 pF 11 pF 9.1 pF 100 pF 50 50 26.5 15 104 38.8 50 76.2 Z = 25 1.5 220 1.8 4.3 k 33 3.3 2 k BD139 BCV62
30.6 x 2 mm 10 x 2 mm 3 x 5 mm 3 x 10 mm 6 x 0.5 mm 3 x 3 mm 22.5 x 2 mm 120 x 1 mm 70 mm 805 805 805 805 805
2322 734 22201 2322 734 21808 2322 734 24302 2322 734 23309 2322 734 23308 9330 912 20112 5322 130 60505
1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board: Rogers ULTRALAM 2000 (B0300M1046QB) (r = 2.55); thickness 0.76 mm. 3. Position of C25 and C26: distance of centre capacitor to transistor BLV857 = 7.5 mm. Position of C27 and C28: distance of centre capacitor to balun B2 = 1.5 mm. 4. The sense resistor on the bias unit is implemented as a stripline L17, in this way we obtain a small sense resistor (approximately 80 m) which can handle the dissipated power.
1997 Jan 16
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
handbook, halfpage
5
MBH761
Zi
handbook, halfpage
() 4 xi
10 ZL () 8
MBH762
RL 3 6
2
4 XL 2
1
ri
0 400
600
800
f (MHz)
1000
0 400
600
800
f (MHz)
1000
VCE = 25 V; ICQ = 2 x 1.1 A; Po sync = 10 W (total device); Th = 25 C.
VCE = 25 V; ICQ = 2 x 1.1 A; Po sync = 10 W (total device); Th = 25 C.
Fig.11 Input impedance (per section) as a function of frequency (series components); typical values.
Fig.12 Load impedance (per section) as a function of frequency (series components); typical values.
handbook, halfpage
20 Gp 16
MBH763
(dB)
12
handbook, halfpage
8
Zi ZL
MBA451
4
0 400
600
800
f (MHz)
1000
VCE = 25 V; ICQ = 2 x 1.1 A; Po sync = 10 W (total device); Th = 25 C.
Fig.13 Gain as a function of frequency; typical values.
Fig.14 Definition of transistor impedance.
1997 Jan 16
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
PACKAGE OUTLINE
19.03 18.77 8.26 8.0 0.1 2.32 2.20 1.66 1.39 5.0 max
BLV857
handbook, full pagewidth
14.22
1
2
5.59 4.57
3.43 6.43 3.17 6.17 5 5.59 4.57
MSA451
3
4 1.66 1.39 (3x)
Dimensions in mm. Recommended screw: cheese-head 4-40 UNC/2A. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Heatsink compound must be applied sparingly and evenly distributed.
Fig.15 SOT324B.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jan 16 11 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/0/02/pp12
Date of release: 1997 Jan 16
Document order number:
9397 750 01381

▲Up To Search▲

Price & Availability of BLV857

	To Download BLV857 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .